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SE2521A60
RangeChargerTM 2.4 GHz Wireless LAN Front End
Applications
IEEE802.11b DSSS WLAN IEEE802.11g OFDM WLAN Access Points, PCMCIA, PC cards
Product Description
The SE2521A60 is a complete 802.11 b/g WLAN RF front-end module providing all the functionality of the power amplifier, power detector, T/R switch, diversity switch and associated matching. The SE2521A60 provides a complete 2.4 GHz WLAN RF solution from the output of the transceiver to the antennas in an ultra compact form factor. Designed for ease of use, all RF ports are matched to 50 to simplify PCB layout and the interface to the transceiver RFIC. The SE2521A60 also includes a transmitter power detector with 20 dB of dynamic range and a digital enable control for transmitter power ramp on/off control. The power ramp rise/fall time is 1 sec typical. The device also provides a notch filter from 3.2-3.3 GHz prior to the input of the power amplifier. The SE2521A60 is footprint compatible to SiGe's SE2521A34 and can be placed directly into existing SE2521A34 designs easily providing higher output power solutions
Features
Pin for pin compatible to SiGe's SE2521A34 but providing 2 dB extra output power Dual Mode IEEE802.11b & IEEE802.11g All RF ports matched to 50 Integrated PA, TX Filter, DPDT T/R and Diversity switches Integrated Power Detector 23 dBm O/P Power, 802.11b, 11 Mbits, ACPR <35 dBc 18 dBm @ 2.0 %, 802.11g, 54 Mbits Single supply voltage: 3.3 V 10 % Lead free and RoHS compliant Small lead free plated package, 8 mm x 7 mm x 1.1 mm, MSL 3
Ordering Information
Part No. SE2521A60 SE2521A60-R SE2521A60-EK1 Package 24 pin LGA 24 pin LGA N/A Remark Samples Tape and Reel Evaluation kit
Functional Block Diagram
VCC1
ANT_A
50 Ohm Match TXEN Bias Circuitry
TXIN
50 Ohm Match
Filter
OMN LPF
PD_OUT
Power Detector 50 Ohm Match
50 Ohm Match
Switch Control C1
RXOUT
C2 C3 C4 ANT_B
Figure 1: Functional Block Diagram
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Pin Out Diagram
ANT_A ANT_B 18 17 C4 16 C3 15 C2 14 C1 13 PD_OUT 6 TX_IN 7 GND 8 GND 9 GND 10 RX_OUT 11 N/C 12 TXEN
GND
GND
GND
GND 20
24 GND VCC1 VCC1 GND GND 1 2 3 4 5
23
22
21
Figure 2: SE2521A60 Pin Out (Top View Through Package)
Pin Out Description
Pin No. 1 2 3 4,5 6 7,8,9 10 11 12 13 14 15 16 17 18 19,20 21 22,23,24 Name GND VCC1 VCC1 GND TX_IN GND RX_OUT N/C TXEN PD_OUT C1 C2 C3 C4 ANT_B GND ANT_A GND Ground +3.3 V DC +3.3 V DC Ground Transmit Input Ground Receive Output No Connect Transmit Enable Power Detector Control 1 Input Control 2 Input Control 3 Input Control 4 Input Antenna B (50 ohm) Ground Antenna A (50 ohm) Ground Description
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Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions defined below. This device is ESD sensitive. Handling and assembly of this device should be at ESD protected workstations. Symbol VCC TXEN TXRF TA TSTG Definition Supply Voltage on VCC Power Amplifier Enable RF Input Power Operating Temperature Range Storage Temperature Range Min. -0.3 -0.3 -20 -40 Max. 4.0 4.0 2.0 85 150 Unit V V dBm C C
Recommended Operating Conditions
Symbol VCC TA Supply Voltage Ambient Temperature Parameter Min. 3.0 0 Typ. 3.3 25 Max. 3.6 85 Unit V C
DC Electrical Characteristics
Conditions: Symbol VCC = VEN = 3.3 V, TA = 25 C, as measured on SiGe Semiconductor's SE2521A60-EV1 evaluation board (de-embedded to device), all unused ports terminated with 50 ohms, unless otherwise noted Parameter Conditions POUT = 18 dBm, 54 Mbps OFDM signal, 64QAM POUT = 15 dBm, 54 Mbps OFDM signal, 64QAM POUT = 20 dBm, 11 Mbps CCK signal, BT = 0.45 VEN = 0 V, No RF Applied, C1 = C2 = C3 = C4 = 0 V Min. 165 110 175 Typ. 180 150 205 2 Max. 230 215 275 10 Unit mA mA mA A
ICC-G
Total Supply Current
ICC-B ICC_OFF
Total Supply Current Total Supply Current
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Logic Characteristics
Conditions: Symbol VENH VENL IENH IENL VCC = VEN = 3.3 V, TA = 25 C, as measured on SiGe Semiconductor's SE2521A60-EV1 evaluation board (de-embedded to device), all unused ports terminated with 50 ohms, unless otherwise noted. Parameter Logic High Voltage (Module On) Logic Low Voltage (Module Off) Input Current Logic High Voltage Input Current Logic Low Voltage Conditions Min. 2.0 0 -1 -1 Typ. Max. VCC 0.5 200 1 Unit V V A A
Switch Characteristics
Conditions: Symbol VCTL_ON VCTL_OFF SWON SWOFF ICTL_ON ICTL_ON CCTL VCC = VEN = 3.3 V, TA = 25 C, as measured on SiGe Semiconductor's SE2521A60-EV1 evaluation board (de-embedded to device), all unused ports terminated with 50 ohms, unless otherwise noted. Parameter Control Voltage (On State) Control Voltage (OFF State) Low Loss Switch Control Voltage High Loss Switch Control Voltage Switch Control Bias Current (RF Applied) Switch Control Bias Current (No RF) Control Input Capacitance Conditions High State = VCTL_ON VCTL_OFF Low State = VCTL_OFF VCTL_OFF On pin (C1,C2,C3,C4) being driven high. RF Applied On pin (C1,C2,C3,C4) being driven high. No RF Min. 3.0 0.0 2.8 0 Typ. Max. 3.6 0.2 VCC 0.3 100 30 100 Unit V V V V A A pF
Switch Control Logic Table
Switch Logic C1 SWON SWOFF SWOFF SWOFF C4 SWOFF SWON SWOFF SWOFF C2 SWOFF SWOFF SWON SWOFF C3 SWOFF SWOFF SWOFF SWON TXRF - ANTA ON OFF OFF OFF Operational Mode TXRF - ANTB OFF ON OFF OFF RXRF - ANTA OFF OFF ON OFF RXRF - ANTB OFF OFF OFF ON
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AC Electrical Characteristics
802.11g Transmit Characteristics
Conditions: Symbol FIN P802.11g VCC = VEN = 3.3 V, TA = 25 C, as measured on SiGe Semiconductor's SE2521A60-EV1 evaluation board (de-embedded to device), all unused ports terminated with 50 ohms, unless otherwise noted. Parameter Frequency Range Output power Condition 54 Mbps OFDM signal, 64QAM, EVM = 2.0 % 11 Mbps CCK signal, BT = 0.45 ACPR(Adj) < -32 ACPR(Alt) < -52 Pout = 19 dBm, 2 Mbps, 802.11b CCK f1 and f2 at Fc +/- 312.5 kHz, P = 15 dBm f1 and f2 at Fc +/- 312.5 kHz, P = 15 dBm 10 % to 90% of final output power level 50 % of VEN edge and 90/10 % of final output power level PIN -2 dBm Load VSWR = 6:1 Min. 2400 Typ. 18 Max. 2500 Unit MHz dBm
P802.11b
Output power
-
23
-
dBm
P1dB S21 S21 S213.2 2f,3f IM3 IM5 tr tdr, tdf S11 STAB
P1dB Small Signal Gain Small Signal Gain Variation Over Band Gain @ 3.2 to 3.3 GHz Harmonics 3 Order Intermodulation 5 Order Intermodulation Rise Time Delay and rise/fall Time Input Return Loss Stability
th rd
22.5 25 4.5
25.5 1.0 0 -49 -40 -55 0.12 6.5
33 3.0 7 -42 -33 -47 0.5 1.0 -
dBm dB dB dB dBm/MHz dBc dBc s s dB
All non-harmonically related outputs less than -50 dBc/1MHz
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Receive Characteristics
Conditions: Symbol FOUT RXIL RXRL Delta Rx VCC = VEN = 3.3 V, TA = 25 C, as measured on SiGe Semiconductor's SE2521A60-EV1 evaluation board (de-embedded to device), all unused ports terminated with 50 ohms, unless otherwise noted. Parameter Frequency Range Insertion Loss Return Loss Delta between Rx paths Condition ANT_A to RX_OUT or ANT_B to RX_OUT C1 or C4 = SWON, C2 = C3 = SWOFF, Device transmitting 15 dBm @ ANTA or ANTB, Power measured @ RX_OUT Small signal input into ANT_A or ANT_B, Device not transmitting, Power measured @ RX_OUT, C1 AND C4 = SWON, C2 and C3 = SWOFF Min. 2400 Typ. 0.8 -15 Max. 2500 1.2 -10 0.5 Unit MHz dB dB dB
TRISOL-2
Rx Leakage
-9
-
3
dBm
ANTRISOL
Isolation between ANT_A and ANT_B to RX_OUT
14
-
24
dB
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Power Detector Characteristics
Conditions: Symbol FOUT PDR PDZLOAD PDVNoRF PDVp18 PDVp20 LPF-3dB VCC = VEN = 3.3 V, TA = 25 C, as measured on SiGe Semiconductor's SE2521A60-EV1 evaluation board (de-embedded to device), unless otherwise noted. Parameter Frequency Range Power detect range, peak power DC load impedance Output Voltage, POUT = No RF Output Voltage, POUT = 18dBm Output Voltage, POUT = 20dBm Power detect low pass filter -3dB corner frequency Condition Measured at ANT_A or ANT_B PDZLOAD = >1 Mohm, PDCLOAD = 180 pF Min. 2400 0 1 0.90 0.44 0.28 270 Typ. 330 Max. 2500 20 1.02 0.66 0.51 400 Unit MHz dBm Mohm V V V KHz
Note: Power detector internal impedance is 2.7 KOhm
Power Detector Response Characteristic
1 0.9 0.8 0.7 0.6 VDET (V) 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 20 22 Output Power (dBm)
Figure 3: SE2521A60 Power Detector Performance Curve
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Typical Performance Data (Ambient Temperature)
Conditions: VCC = VEN = 3.3 V, Frequency = 2450 MHz, TA = 25 C, as measured on SiGe Semiconductor's SE2521A60-EV1 evaluation board , all unused ports terminated with 50 ohms, unless otherwise noted.
802.11g Typical Performance
Conditions: 54Mbps 802.11g OFDM Signal
802.11g EVM vs. Output Pow er over Frequency (25 C, 3.3V) 2400 MHz 5 4.5 4 3.5 EVM (%) 2.5 2 1.5 1 0.5 0 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Output Pow er (dBm )
EVM (%) 802.11g EVM vs. Output Pow er over Voltage (2450 MHz, 25 C) 2.7 V 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 6 7 8 9 10 11 12 13 14 15 16 Output Pow er (dBm ) 17 18 19 20 21 3.0 V 3.3 V 3.6 V
2450 MHz
2500 MHz
3
Figure 4: 802.11g Typical EVM Performance: (a) Over Frequency, (b) Over Voltage
802.11g OFDM ICC vs. Output Pow er over Frequency (25 C, 3.3 V) 2400 MHz 220 200 180 160 140 120 100 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Output Pow er (dBm ) 2450 MHz 2500 MHz
Figure 5: 802.11g Typical Current Consumption (ICC) Performance over Frequency
802.11b Typical Performance
802.11B ACPR-Adj vs. Output Pow er over Voltage (25 C, 2450 MHz, 802.11b 11 Mbps Signal) 2.7 V -26 -28 ACPR (dBc) -30 ACPR (dBc) -32 -34 -36 -38 -40 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Output Pow er (dBm ) 3.0 V 3.3 V 3.6 V -40 -45 -50 -55 -60 -65 -70 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Output Pow er (dBm ) 802.11B ACPR-Alt vs. Output Pow er over Voltage (25 C, 2450 MHz, 802.11b 11Mbps Signal) 2.7 V 3.0 V 3.3 V 3.6 V
(a) (b) Figure 6: 802.11b Typical ACPR Performance (11 Mbps, CCK, BT = 0.45) (a) 802.11b ACPR-ADJ vs. POUT over Voltage and (b) 802.11b ACPR-ALT vs. POUT over Voltage
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2nd, 3rd Harm onics vs. Output Pow er (25 C, 2450 MHz, 802.11b 1 Mbps CCK Signal) 2nd Harmonic -40 Harmonic Power (dBm/1MHz) -45 -50 -55 -60 -65 -70 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Pow er (dBm ) 3rd Harmonic
Figure 7: 802.11b Typical Harmonic Performance (1 Mbps, CCK)
CW Typical Performance
IMD3, IMD5 vs. Output Pow er (25 C, 2450 MHz, CW) IMD3 -30 IMD5
P1dB vs. Frequency (25 C, 3.3 V, CW) P1dB 27 26.5 P1dB (dBm) 26 25.5 25 Gain 33 32 31 Gain (dB)
22
-40
IMD (dBc)
-50
30 29 28 27
-60
-70
24.5 24 2400
26 25 2500
-80 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
2420
Output Pow er (dBm )
2440 2460 Frequency (MHz)
2480
(a)
(b)
Figure 8: Typical CW Performance (a) IMD3, IMD5 vs. Output Power, (b) P1dB, Gain vs. Frequency
Detector Performance
VDET vs. Output Pow er over Frequency (25 C, 3.3 V, CW) 2400 MHz 1 0.9 0.8 0.7
VDET (V) VDET vs. Output Pow er over Voltage (25 C, 2450 MHz, CW) 2.7 V 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 3.0 V 3.3 V 3.6 V
2450 MHz
2500 MHz
VDET (V)
0.6 0.5 0.4 0.3 0.2 0.1 0 2 4 6 8 10 12 14 16 18 20 22 Output Pow er (dBm )
0
2
4
6
8
10
12
14
16
18
20
Output Pow er (dBm )
(a) (b) Figure 9: Typical Power Detector Response: (a) Over Frequency, (b) Over Voltage
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Typical Performance Data (Over Temperature: -40 C, 25 C, 85 C)
Conditions: VCC = VEN = 3.3 V, Frequency = 2450 MHz, as measured on SiGe Semiconductor's SE2521A60-EV1 evaluation board , all unused ports terminated with 50 ohms, unless otherwise noted.
802.11g Typical Performance
Conditions: 54Mbps 802.11g OFDM Signal
802.11g EVM vs. Output Pow er over Frequency, Tem perature (3.3V) -40 C, 2400 MHz 25 C, 2400 MHz 85 C, 2400 MHz 5 4.5 EVM (%) 4 3.5 3 2.5 2 1.5 1 0.5 0 6 7 8 9 10 11 12 13 14 15 16 Output Pow er (dBm ) 17 18 19 20 21 -40 C, 2450 MHz 25 C, 2450 MHz 85 C, 2450 MHz -40 C, 2500 MHz 25 C, 2500 MHz 85 C, 2500 MHz
802.11g EVM vs. Output Pow er over Tem perature, Voltage (2450 MHz) -40 C, 2.7 V 25 C, 2.7 V 85 C, 2.7 V 5 4.5 4 EVM (%) 3.5 3 2.5 2 1.5 1 0.5 0 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Output Pow er (dBm ) -40 C, 3.0 V 25 C, 3.0 V 85 C, 3.0 V -40 C, 3.3 V 25 C, 3.3 V 85 C, 3.3 V -40 C, 3.6 V 25 C, 3.6 V 85 C, 3.6 V
Figure 10: 802.11g Typical EVM Performance: (a) Over Frequency and Temperature, (b) Over Voltage and Temperature
802.11g OFDM ICC vs. Output Pow er over Frequency, Term perature (3.3 V) -40 C, 2400 MHz 25 C, 2400 MHz 85 C, 2400 MHz 220 200 ICC (mA) 180 160 140 120 100 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Output Pow er (dBm ) -40 C, 2450 MHz 25 C, 2450 MHz 85 C, 2450 MHz -40 C, 2500 MHz 25 C, 2500 MHz 85 C, 2500 MHz
Figure 11: 802.11g Typical Current Consumption (ICC) Performance over Frequency and Temperature
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802.11b Typical Performance
802.11B ACPR-Adj vs. Output Pow er over Voltage, Tem perature (2450 MHz, 802.11b 11 Mbps Signal) -40 C, 2.7 V 25 C, 2.7 V 85 C, 2.7 V -26 -28 ACPR (dBc) -30 -32 -34 -36 -38 -40 15 16 17 18 19 20 21 22 23 24 25 Output Pow er (dBm ) -40 C, 3.0 V 25 C, 3.0 V 85 C, 3.0 V -40 C, 3.3 V 25 C, 3.3 V 85 C, 3.3 V -40 C, 3.6 V 25 C, 3.6 V 85 C, 3.6 V
802.11B ACPR-Alt vs. Output Pow er over Voltage, Tem perature (2450 MHz, 802.11b 11Mbps Signal) -40 C, 2.7 V 25 C, 2.7 V 85 C, 2.7 V -40 -45 ACPR (dBc) -50 -55 -60 -65 -70 15 16 17 18 19 20 21 22 23 24 25 Output Pow er (dBm ) -40 C, 3.0 V 25 C, 3.0 V 85 C, 3.0 V -40 C, 3.3 V 25 C, 3.3 V 85 C, 3.3 V -40 C, 3.6 V 25 C, 3.6 V 85 C, 3.6 V
(a) (b) Figure 12: 802.11b Typical ACPR Performance over Voltage and Temperature (11 Mbps, CCK, BT = 0.45) (a) 802.11b ACPR-ADJ vs. POUT and (b) 802.11b ACPR-ALT vs. POUT
2nd Harm onic vs. Output Pow er over Tem perature (3.3 V, 2450 MHz, 802.11b 1Mbps CCK Signal) -40 C -40 Harmonic Power (dBm/1MHz) -45 -50 -55 -60 -65 -70 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 25 C 85 C
3rd Harm onic vs. Output Pow er over Tem perature (3.3 V, 2450 MHz, 802.11b 1Mbps CCK Signal) -40 C -30 -35 Harmonic Power (dBm/1MHz) -40 -45 -50 -55 -60 -65 -70 -75 -80 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Pow er (dBm ) 25 C 85 C
Output Pow er (dBm )
Figure 13: 802.11b Typical Harmonic Performance over Temperature (1 Mbps, CCK) (a) 2nd Harmonic (b) 3rd Harmonic
CW Typical Performance
P1dB vs. Frequency over Tem perature (3.3 V, CW) -40 C 27 26.5 26 25.5 25
27 Sm all Signal Gain vs. Frequency over Tem perature (3.3 V, CW) -40 C 33 32 31 25 C 85 C
25 C
85 C
P1dB (dBm)
Gain (dBm)
30 29 28
24.5 24 2400
26 25 2400
2420
2440 2460 Frequency (MHz)
2480
2500
2420
2440
2460
2480
2500
Frequency (MHz)
(a)
(b)
Figure 14: Typical CW Performance over Temperature (a) P1dB vs. Frequency, (b) Gain vs. Frequency
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IMD3 vs. Output Pow er over Temperature (2450 MHz, 3.3 V, CW) -40 C, IMD3 -30 25 C, IMD3 85 C, IMD3 -30
IMD5 vs. Output Pow er over Tem perature (2450 MHz, 3.3 V, CW) -40 C, IMD5 25 C, IMD5 85 C, IMD5
-40 IMD3 (dBc) IMD (dBc) 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
-40
-50
-50
-60
-60
-70
-70
-80 Output Pow er (dBm )
-80 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Output Pow er (dBm )
(a)
(b)
Figure 15: Typical CW Performance over Temperature (a) IMD3 vs. Output Power, (b) P1dB vs. Frequency
Typical Power Detector Performance
SE2521A60 Power Detector Response over Temperature and Frequency
-40C, 2400 MHz 25C, 2400 MHz 85C, 2400 MHz 1 0.9 0.8 VDET (V) 0.7 0.6 0.5 0.4 0.3 0.2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 -40C, 2450 MHz 25C, 2450 MHz 85C, 2450 MHz -40C, 2500 MHz 25C, 2500 MHz 85C, 2500 MHz
Pow er Detector Response over Tem perature, Voltage (2450 MHz) -40 C, 2.7 V 25 C, 2.7 V 85 C, 2.7 V 1 0.9 0.8 VDET (V) 0.7 0.6 0.5 0.4 0.3 0.2 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 -40 C, 3.0 V 25 C, 3.0 V 85 C, 3.0 V -40 C, 3.3 V 25 C, 3.3 V 85 C, 3.3 V -40 C, 3.6 V 25 C, 3.6 V 85 C, 3.6 V
Output Pow er (dBm )
Output Pow er (dBm )
(a) (b) Figure 16: Typical Power Detector Response: (a) Over Frequency and Temperature, (b) Over Voltage and Temperature
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Package Information
Figure 17 shows the detailed device package diagram. The pads on the SiGe RF modules are plated with gold over nickel, with a gold thickness of approx. 0.75 to 1.0 um. The modules can be reflowed onto FR4 based material using eutectic Pb based or common tin based Pb free solder pastes.
5
4
3
2
1
1 24 24
2
3
4
5 6
6 GND 7 GND 8 GND GND GND GND GND GND GND
GND 23 23 GND
GND
GND
GND
GND 7 GND
22
22 GND GND
8
9 GND 10 GND GND 11 GND 12 GND GND GND GND GND GND
21
21 GND GND
9
20
20 GND GND GND
10
19
19 GND GND GND GND GND
11
18
18 17 16 15 14 13
12
13
14
15
16
17
TOP SIDE
GROUND PAD DETAIL
NOTES :
SIGNAL PAD DETAIL
BOTTOM SIDE
Figure 17: SE2521A60 Package Diagram
Package Handling Information
Because of its sensitivity to moisture absorption, instructions on the shipping container label must be followed regarding exposure to moisture after the container seal is broken, otherwise, problems related to moisture absorption may occur when the part is subjected to high temperature during solder assembly. The SE2521A60 is capable of withstanding a Pb free solder reflow. Care must be taken when attaching this product, whether it is done manually or in a production solder reflow environment. If the part is manually attached, precaution should be taken to insure that the device is not subjected to temperatures above its rated peak temperature for an extended period of time. For details on both attachment techniques, precautions, and handling procedures recommended by SiGe, please refer to: SiGe's Application Note: "Land Grid Array Module Solder Reflow & Rework Information", Document Number 69APP-01. SiGe's Application Note: "Handling, Packing, Shipping and Use of Moisture Sensitive LGA", Document Number 69-APP-02.
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Recommended PCB Footprint
Figure 18 shows the recommended PCB footprint for the SE2521A60.
LAND PATTERN
MASK PATTERN
GROUND PAD DETAIL
SIGNAL LAND DETAIL
VIA IN SIGNAL LAND TABLE
PIN NAME DESCRIPTION RECOMMENDED
NOTES :
RECOMMENDED FOOTPRINT LGA100P800X700-24-610X505
PASTE SCREEN PATTERN
01
Figure 18: SE2521A60 Recommended PCB Footprint
Branding Information
The device branding is shown in Figure 19.
Pin 1 Identifier Pin 1 Part Number Lot Code Terminal Finish
SiGe 2521A60 Lot Code
e4
Figure 19: SE2521A60 Branding and Pin 1 Location
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Tape and Reel
Production quantities of this product are shipped in a standard tape-and-reel format. dimensions and sizing is shown in Table 1 and Figure 20. Parameter Devices Per Reel Reel Diameter Value 2500 13 inches Specific tape and reel
Table 1: Tape and Reel Dimensions
Figure 20: SE2521A60 Tape and Reel Information
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http://www.sige.com Email: sales@sige.com
Customer Service Locations: North America: 1050 Morrison Drive, Suite 100 Ottawa ON K2H 8K7 Canada Phone: +1 613 820 9244 Fax: +1 613 820 4933 Hong Kong Phone: +852 3428 7222 Fax: +852 3579 5450 San Diego Phone: +1 858 668 3541 (ext. 226) Fax: +1 858 668 3546 United Kingdom Phone: +44 1264 850754 Fax: +44 1264 852601
Product Preview The datasheet contains information from the product concept specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Preliminary Information The datasheet contains information from the design target specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an "as is" basis. SiGe Semiconductor, Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor, Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor, Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor, Inc. RangeCharger , StreamCharger , and PointCharger Copyright 2006 SiGe Semiconductor, Inc.
TM TM TM
are trademarks owned by SiGe Semiconductor, Inc.
All Rights Reserved
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